“Transistor characteristics in advanced technology nodes are strongly impacted by devices design and process integration choices. Variation in the layout and pattern configuration in close proximity ...
In this paper, a 5nm FinFET flow was built using the SEMulator3D virtual fabrication platform. Different STI (shallow trench isolation) recess profiles were investigated using the pattern-dependent ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results